| EP/E063632/1 | New high-performance avalanche photodiodes based on the unique properties of dilute nitrides | (C) |
| GR/S23179/01 | Platform: Hydrostatic Pressure Techniques Applied to Optoelectronic Devices | (P) |
| GR/R82630/01 | Optical and electronic properties of the dilute nitrides GaSb1-xNx and InSb1-xNx | (C) |
| GR/R96606/01 | PLATFORM: Platform Grant for the Advanced Technology Institute at the University of Surrey | (C) |
| GR/S05359/01 | Support for HPSP-X Conference, Guildford 2002 | (P) |
| GR/R19298/01 | High Pressure Studies of Quantum Cascade Lasers | (C) |
| GR/R08070/01 | Ultrafast Studies of Optoelectronic Devices For Telecommunications | (P) |
| GR/M85098/01 | THEORY OF GAINNAS MATERIALS AND OPTOELECTRONICS DEVICES | (P) |
| GR/M85678/01 | ASSESMENT OF INGAASN MATERIALS AND OPTOELECTRIC DEVICES | (P) |
| GR/M47102/01 | LONG WAVELENGTH QUANTUM DOT LASERS | (P) |
| GR/M35345/01 | PROCESSING OF OPTOELECTRONIC MATERIALS | (C) |
| GR/L38219/01 | UNCOOLED DIODE LASERS FOR THE MID INFRA-RED | (P) |
| GR/K79109/01 | THE TEMP PROFILE IN HIGH-POWER DIODE LASERS AND ITS INFLUENCE ON EFFICIENCY AND LIFETIME. | (P) |
| GR/K97639/01 | SIMULATION OF ADVANCED STRAINED-LAYER OPTOELECTRONIC DEVICES | (C) |
| GR/K10805/01 | THEORETICAL INVESTIGATION OF ADVANCED STRAINED-LAYER BANDSTRUCTURE ENGINEERING FOR OPTICAL MODULATORS | (P) |
| GR/K32234/01 | GAIN AND LOSS IN 1.5 MICROMETER STRAINED-LAYER LASERS | (P) |
| GR/K35464/01 | DEVELOPMENT OF STRAINED-LAYER SEMICONDUCTORS AND THEIR APPLICATION TO OPTICAL AMPLIFIERS | (P) |
| GR/H33886/01 | THE PHYSICS AND APPLICATIONS OF TENSILE AND COMPRESSIVE STRAIN IN QUANTUM WELL STRUCTURES | (P) |
| GR/G36142/01 | STRAINED LAYER SEMICONDUCTOR MATERIALS | (P) |
| GR/F64999/01 | BAND STRUCTURE DEPENDENCE OF IMPACT IONISATION FROM HIGH PRESSURE MEASUREMENTS | (P) |
| GR/F04858/01 | ANTIMONIDE-BASED SEMICONDUCTORS DEVICES | (C) |
| GR/E75356/01 | LOW DIMENSIONAL STRUCTURES AT HIGH PRESSURE | (P) |
| GR/E40736/01 | THE PHYSICS AND ENGINEERING OF III-V STRAINED LAYER SUPERLATTICES | (P) |
| GR/E84785/01 | LOW DIMENSIONAL STRUCTURE AT HIGH PRESSURES | (P) |