EP/M00662X/1 | Mechanisms and Control of Resistive Switching in Dielectrics | (C) |
EP/K018884/1 | ZnO MESFETs for application to Intelligent Windows | (P) |
EP/I038357/1 | eFuturesXD - crossing the boundaries | (C) |
EP/I012907/1 | High permittivity dielectrics on Ge for end of Roadmap application | (P) |
EP/I028722/1 | Micro-PADI sources for applications in 2-D chemical imaging | (C) |
EP/F05551X/1 | A Biologically Plausible Spiking Neuron in Hardware | (P) |
EP/E012078/1 | Feasibility of Novel Deca-nanometer vertical MOSFETs for low-cost Radio Frequency Application | (P) |
EP/C003101/1 | Performance, degradation and defect structure of MOS devices using high-k materials as gate dielectrics | (P) |
GR/T07879/01 | NETWORK:Silicon Research and Exploitation For the Nanotechnology Era | (C) |
GR/R03785/01 | Sigec Hbts On Insulator For Rf Communications | (P) |
GR/M93741/01 | 0.03UM VERTICAL SHALLOW TRENCH CMOS TECHNOLOGY (VST-CMOS) | (P) |
GR/M18010/01 | LOW POWER ARCHITECTURE, CIRCUITS AND TECHNOLOGIES (POWER PACK) | (P) |
GR/L54776/01 | A SIGE ON INSULATOR TECHNOLOGY FOR HIGH-SPEED, LOW POWER MOBILE COMMUNICATIONS APPLICATIONS | (P) |
GR/L27879/01 | LOW POWER ARCHITECTURE, CIRCUITS AND TECHNOLOGIES (POWERPACK) | (P) |
GR/K82871/01 | OXIDATION OF SIGE FOR DEVICE APPLICATION. | (P) |
GR/H72199/01 | PHYSICS OF NOVEL STRUCTURES FOR APPLICATION IN SUB-0.1 M IC PROCESSES | (P) |
GR/H65733/01 | DIELECTRICS FOR ADVANCED CMOS GATES | (C) |
GR/H48361/01 | ASSESSMENT OF MATERIALS FOR ADVANCED SOI SUBSTRATES | (P) |
GR/F36682/01 | DIELECTRICS FOR ADVANCED CMOS GATES | (C) |
GR/F42782/01 | POROUS SILICON (FIPOS)DEVELOPMENT | (P) |
GR/F35180/01 | MATERIALS PROCESSING FOR ADVANCED SOI SUBSTRATES | (P) |
GR/F07248/01 | EPITAXIAL COBALT SILICIDE CONTACTS TO SILICON | (C) |
GR/E19565/01 | STUDY OF A SELF-ALIGNED HBT STRUCTURE AND SIMULATION OF FAST LOW POWER VLSI CIRCUITS EMPLOYING IT | (C) |