| EP/D040396/1 | SuperSTEM - the UK aberration-corrected STEM facility | (C) |
| GR/T08869/01 | Unit-cell level assembly of complex oxides - developing a new synthetic method for oxide chemistry | (C) |
| GR/S97828/01 | Future of Materials Science & Engineering Education | (C) |
| GR/S93646/01 | Ultra High Resolution Composition determnation form HREM and STEM images | (P) |
| GR/S41029/01 | Development and application of aberration-corrected electron microscopy (SuperSTEM) | (P) |
| GR/S59130/01 | Composites on Tour - A Mobile Exhibition | (P) |
| GR/N64908/01 | LOW ENERGY LOSS EELS FOR MATERIALS SCIENCE | (P) |
| GR/R55207/01 | The NW SuperSTEM; a multi-user sub-angstrom analytical electron microscope facility for the UK | (P) |
| GR/N27286/01 | MTP IN ENGINEERING APPLICATIONS OF LASERS | (C) |
| GR/M18027/01 | SIZE AND COMPOSITION OF SEMICONDUCTOR NANOSTRUCTURES USING SCANNING TRANSMISSION ELECTRON MICROSCOPY | (P) |
| GR/L85510/01 | JREI: SECONDARY ION MASS SPECTROSCOPY FOR CHEMICAL MICROSCOPY | (P) |
| GR/K90524/01 | DEVELOPMENT OF A MONOLITHIC INTEGRATED POLY-SILICON ARRAY TECHNOLOGY FOR ACTIVE MATRIX LIQUID CRYSTAL DISP | (C) |
| GR/L14411/01 | DEVELOPMENTS IN ULTRA-HIGH RESOLUTION ANALYTICAL ELECTRON MICROSCOPY | (P) |
| GR/K31411/01 | IN(GAAL)AS/INP AND IN(GAAL)P/GAAS STRAINED LAYER HETER -OSTRUCTURES FOR ENHANCED OPTOELECTRONIC DEVICE APPLI | (C) |
| GR/J77436/01 | CARBON DOPING IN GAAS, ALGAAS ANS INGAAS | (P) |
| GR/H62480/01 | PHTO-ASSISTED CHEMICAL BEAM EPITAXY | (P) |
| GR/H98601/01 | ELECTRON MICROSCOPY STUDIES OF CATALYSTS USING AN EX-SITU GAS REACTION CELL | (C) |
| GR/H84451/01 | ULTRA HIGH RESOLUTION ANALYSIS OF MATERIALS | (C) |
| GR/H71277/01 | GROWTH OF INGAALAS STRAINED LAYERS ON INP AND INALAS : STRUCTURAL STUDIES | (P) |
| GR/H84468/01 | ULTRA HIGH RESOLUTION ANALYSIS OF MATERIALS | (P) |
| GR/H71710/01 | LASER ASSISTED CHEMICAL BEAM EPITAXY | (P) |
| GR/H40020/01 | METAL ORGANIC MOLECULAR BEAM EPITAXY (MOMBE) GROWTH OF 3-5 SEMICONDUCTORS | (P) |
| GR/F96853/01 | METAL ORGANIC MOLECULAR BEAM EPITAXY (MOMBE) GROWTH OF3-5 SEMICONDUCTORS | (P) |
| GR/F74370/01 | ELECTRON MICROSCOPE STUDIES OF SEMICONDUCTORS AND OTHER MATERIALS | (P) |
| GR/F44106/01 | MICROSTRUCTURE OF III-V COMPOUND MULTILAYER SYSTEMS FOR ADVANCED OPTOELECTRONIC DEVICES | (C) |
| GR/E98522/01 | LASER-ASSISTED METAL ORGANIC MOLECULAR BEAM EPITAXY OF III-V SEMICONDUCTORS | (P) |
| GR/E40736/01 | THE PHYSICS AND ENGINEERING OF III-V STRAINED LAYER SUPERLATTICES | (C) |