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Researcher Details
 
Name: Professor A Asenov
Organisation: University of Glasgow
Department: School of Engineering
Current EPSRC-Supported Research Topics:
Electronic Devices & Subsys.

Current EPSRC Support
EP/S000224/1 Variability-aware RRAM PDK for design based research on FPGA/neuro computing(P)
Previous EPSRC Support
EP/L010585/1 Time-Dependent Variability: A test-proven modelling approach for systems verification and power consumption minimization(P)
EP/K016776/1 Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides(P)
EP/I038357/1 eFuturesXD - crossing the boundaries(C)
EP/G069352/1 Advanced discretisation strategies for atomistic nano CMOS simulation(C)
EP/H024107/1 Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit(C)
EP/G04130X/1 ENIAC MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems (MODERN)(P)
EP/F032633/1 Renaissance Germanium(P)
EP/E038344/1 Atomic Scale Simulation of Nanoelectronic Devices(P)
EP/F002610/1 III-V MOSFETs for Ultimate CMOS(C)
EP/E003125/1 Meeting the design challenges of the nano-CMOS electronics(P)
EP/D04698X/1 Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors(P)
EP/D501288/1 Electronics Design Centre for Heterogeneous Systems(C)
EP/D025494/1 UK Support for European Doctoral Level School in Device Modelling(C)
GR/T18271/01 Statistical 3D Simulation of Intrinsic Parameter Fluctuations in Decanoneter MOSFETs Introduced by Discreteness of Charge and Matter(P)
GR/S80097/01 Meeting the materials challenges of nano-CMOS electronics(P)
GR/T07879/01 NETWORK:Silicon Research and Exploitation For the Nanotechnology Era(C)
GR/S61218/01 Sub 100nm III-V MOSFET's for Digital Applications(C)
GR/R89738/01 Atomistic Simulation of Nanoscale Devices(P)
GR/R45659/01 BIO-NANOTECHNOLOGY IRC(R)
GR/R63585/01 JREI:- Advanced Simulation of Nano-Bioelectronic systems and devices(P)
GR/R47325/01 Understanding and Utilising Fluctuations in Systems of Deep Sub-Micron MOS Devices(C)
GR/N65677/01 SIGE FOR MOS TECHNOLOGIES PHASE 2 - DEVELOPMENT AND APPLICATIONS(C)
GR/M93383/01 NANOFABRICATION TECHNOLOGY DRIVEN BY HIGH SPEED DEVICES(C)
GR/L53755/01 SIGE FOR MOS TECHNOLOGIES(C)
GR/L37328/01 ULTRA-LINEAR DEVICES AND CIRCUITS FOR MICROWAVE FREQUENCIES(C)
GR/L15678/01 NANOELECTRONICS TECHNOLOGY AND ULTRAFAST DEVICES (ROLLING GRANT)(C)
GR/K54915/01 SIMULATION AND OPTIMISATION OF SIGE FETS FOR HIGH SPEED VLSI APPLICATIONS(C)
GR/K73473/01 PARALLEL 3D FINITE ELEMENT SIMULATION OF CELLULAR POWER SEMICONDUCTOR DEVICES(P)
GR/J90718/01 NANOELECTRONIC AND QUANTUM DEVICES AND SYSTEMS (ROLLING GRANT)(C)
GR/H23085/01 HIGH TEMPERATURE MOS-GATED POWER SEMICONDUCTORS AND ADVANCED AIRCRAFT ELECTRIC POWER CONDITIONING SYSTEMS(C)
Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator