| EP/T023244/1 | Realistic fault modelling to enable optimization of low power IoT and Cognitive fault-tolerant computing systems | (P) |
| EP/S000224/1 | Variability-aware RRAM PDK for design based research on FPGA/neuro computing | (P) |
| EP/L010585/1 | Time-Dependent Variability: A test-proven modelling approach for systems verification and power consumption minimization | (P) |
| EP/K016776/1 | Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides | (P) |
| EP/I038357/1 | eFuturesXD - crossing the boundaries | (C) |
| EP/G069352/1 | Advanced discretisation strategies for atomistic nano CMOS simulation | (C) |
| EP/H024107/1 | Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit | (C) |
| EP/G04130X/1 | ENIAC MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems (MODERN) | (P) |
| EP/F032633/1 | Renaissance Germanium | (P) |
| EP/E038344/1 | Atomic Scale Simulation of Nanoelectronic Devices | (P) |
| EP/F002610/1 | III-V MOSFETs for Ultimate CMOS | (C) |
| EP/E003125/1 | Meeting the design challenges of the nano-CMOS electronics | (P) |
| EP/D04698X/1 | Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors | (P) |
| EP/D501288/1 | Electronics Design Centre for Heterogeneous Systems | (C) |
| EP/D025494/1 | UK Support for European Doctoral Level School in Device Modelling | (C) |
| GR/T18271/01 | Statistical 3D Simulation of Intrinsic Parameter Fluctuations in Decanoneter MOSFETs Introduced by Discreteness of Charge and Matter | (P) |
| GR/S80097/01 | Meeting the materials challenges of nano-CMOS electronics | (P) |
| GR/T07879/01 | NETWORK:Silicon Research and Exploitation For the Nanotechnology Era | (C) |
| GR/S61218/01 | Sub 100nm III-V MOSFET's for Digital Applications | (C) |
| GR/R89738/01 | Atomistic Simulation of Nanoscale Devices | (P) |
| GR/R63585/01 | JREI:- Advanced Simulation of Nano-Bioelectronic systems and devices | (P) |
| GR/R45659/01 | BIO-NANOTECHNOLOGY IRC | (R) |
| GR/R47325/01 | Understanding and Utilising Fluctuations in Systems of Deep Sub-Micron MOS Devices | (C) |
| GR/N65677/01 | SIGE FOR MOS TECHNOLOGIES PHASE 2 - DEVELOPMENT AND APPLICATIONS | (C) |
| GR/M93383/01 | NANOFABRICATION TECHNOLOGY DRIVEN BY HIGH SPEED DEVICES | (C) |
| GR/L53755/01 | SIGE FOR MOS TECHNOLOGIES | (C) |
| GR/L37328/01 | ULTRA-LINEAR DEVICES AND CIRCUITS FOR MICROWAVE FREQUENCIES | (C) |
| GR/L15678/01 | NANOELECTRONICS TECHNOLOGY AND ULTRAFAST DEVICES (ROLLING GRANT) | (C) |
| GR/K54915/01 | SIMULATION AND OPTIMISATION OF SIGE FETS FOR HIGH SPEED VLSI APPLICATIONS | (C) |
| GR/K73473/01 | PARALLEL 3D FINITE ELEMENT SIMULATION OF CELLULAR POWER SEMICONDUCTOR DEVICES | (P) |
| GR/J90718/01 | NANOELECTRONIC AND QUANTUM DEVICES AND SYSTEMS (ROLLING GRANT) | (C) |
| GR/H23085/01 | HIGH TEMPERATURE MOS-GATED POWER SEMICONDUCTORS AND ADVANCED AIRCRAFT ELECTRIC POWER CONDITIONING SYSTEMS | (C) |