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| Name: |
Professor S Donnelly |
| Organisation: |
University of Huddersfield |
| Department: |
Sch of Computing and Engineering |
| Current EPSRC-Supported Research
Topics: |
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Materials Characterisation
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Materials Synthesis & Growth
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Optical Devices & Subsystems
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Optoelect. Devices & Circuits
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| Current EPSRC Support |
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| Previous EPSRC Support |
| EP/T027193/1 | Combined Effects of Light Gas and Damage Accumulation in Beryllium | (C) |
| EP/K039237/2 | Ceramic Coatings for Clad (The C^3 Project): Advanced Accident-Tolerant Ceramic Coatings for Zr-alloy Cladding | (C) |
| EP/M01858X/1 | Radiation Damage in Nanoporous Nuclear Materials | (C) |
| EP/M028283/1 | World Class Materials Facilities at the University of Huddersfield | (C) |
| EP/M011135/1 | A Study of the Combined Effects of Displacement Damage and Helium Accumulation in Model Nuclear Materials | (P) |
| EP/K03684X/1 | Atomistic Scale Study of Radiation Effects in ABO3 Perovskites | (P) |
| EP/K039237/1 | Ceramic Coatings for Clad (The C^3 Project): Advanced Accident-Tolerant Ceramic Coatings for Zr-alloy Cladding | (C) |
| EP/I003223/1 | Fundamentals of current and future uses of nuclear graphite | (C) |
| EP/H018921/1 | Materials for fusion & fission power | (C) |
| EP/F012853/1 | Worldwide network of in-situ TEM/ion accelerator facilities | (P) |
| EP/E017266/1 | In-Situ TEM Studies of Ion-Irradiated Materials | (P) |
| GR/M33242/01 | MICRO-CAVITY TECHNIQUES FOR GETTERING TRACE IMPURITIES IN ADVANCED SEMICONDUCTOR DEVICES | (P) |
| GR/K95208/01 | A FUNDAMENTAL STUDY OF THE FORMATION OF HARD C-N COMPOUNDS | (C) |
| GR/H65320/01 | HIGH RESOLUTION ANALYTICAL ELECTRON MICROSCOPY OF ION BEAM DEPOSITED THIN FILMS & MAGNETIC MULTILAYERS | (P) |
| GR/H23887/01 | THE FABRICATION AND ANALYSIS OF NANOSTRUCTURES BY ULTRA LOW ENERGY ION BEAMS. | (C) |
| GR/F30505/01 | SCANNING TUNNELING MICROSCOPY OF ION BOMBARDED SURFACES & ION BEAM DEPOSITED THIN FILMS | (P) |
| GR/E34728/01 | PROPERTIES OF ROOM TEMPERATURE SOLID INERT GAS PRECIPITATES IN ION IMPLANTED METALS | (P) |
| GR/E34254/01 | THE GROWTH AND DOPING OF SEMICONDUCTING LAYERS USING LOW ENERGY ION BEAMS | (P) |
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Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator
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