| EP/T024968/1 | EPSRC Core Capital Award | (C) |
| EP/S03725X/1 | Evaluation of beta-Ga2O3 for high power RF device applications | (C) |
| EP/R024413/1 | Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient Operation | (C) |
| EP/N014820/2 | Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates | (C) |
| EP/P030459/1 | Bid for new Electron-Beam Lithography Tool | (C) |
| EP/P00945X/1 | Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs | (C) |
| EP/N014820/1 | Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates | (C) |
| EP/J018678/1 | Triple wavelength superspectral camera focal-plane array (SUPERCAMERA) | (C) |
| EP/K014471/1 | Silicon Compatible GaN Power Electronics | (P) |
| EP/F014791/1 | TeraHertz Planar Gunn Diodes | (C) |
| EP/F002610/1 | III-V MOSFETs for Ultimate CMOS | (P) |
| EP/D501288/1 | Electronics Design Centre for Heterogeneous Systems | (C) |
| EP/C523881/1 | A Research Consortium in Speckled Computing | (C) |
| GR/S61218/01 | Sub 100nm III-V MOSFET's for Digital Applications | (P) |
| GR/A10994/01 | METAMORPHIC GAAS HEMTS FOR HIGH BANDWIDTH WIRELESS COM MUNICATION | (P) |
| GR/N64359/01 | ULTRAFAST ROOM-TEMPERATURE NANOBOLOMETER DEVICE COOLED BY BALLISTIC ELECTRONS | (C) |
| GR/N65868/01 | SIGE FOR MOS TECHNOLOGIES PHASE 2 - DEVELOPMENT AND APPLICATION | (P) |
| GR/M93383/01 | NANOFABRICATION TECHNOLOGY DRIVEN BY HIGH SPEED DEVICES | (C) |
| GR/M01326/01 | 75-300 GHZ MULTI-CHIP MODULE TECHNOLOGY | (P) |
| GR/L37328/01 | ULTRA-LINEAR DEVICES AND CIRCUITS FOR MICROWAVE FREQUENCIES | (P) |
| GR/L37618/01 | MILLIMETRE-WAVE SIGNAL PROCESSING FOR DATA COMMUNICATIONS AND RADAR APPLICATIONS | (P) |
| GR/L53779/01 | SIGE FOR MOS TECHNOLOGIES | (P) |
| GR/K86480/01 | SEMICONDUCTOR LASER TERAHERTZ FREQUENCY CONVERTERS | (C) |
| GR/L15678/01 | NANOELECTRONICS TECHNOLOGY AND ULTRAFAST DEVICES (ROLLING GRANT) | (C) |