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Researcher Details
 
Name: Professor TE Whall
Organisation: University of Warwick
Department: Physics
Current EPSRC-Supported Research Topics:

Current EPSRC Support
There is no current EPSRC Support
Previous EPSRC Support
GR/S21243/01 SiGeC Heterostructures for CMOS Technology(C)
GR/R62519/01 New Generation SS-MBE Growth System for Silicon System for Silicon Heterostructures.(C)
GR/N65691/01 SIGE FOR MOS TECHNOLOGIES PHASE 2 - DEVELOPMENT AND APPLICATIONS(P)
GR/L53793/01 SIGE FOR MOS TECHNOLOGIES(P)
GR/L30787/01 THERMOPOWER: A NEW TOOL FOR SEMICONDUCTOR CHARACTERISATION(C)
GR/K32616/01 THE ESTABLISHMENT AND OPERATION OF A SILICON-GERMANIUM MBE GROWTH FACILITY(C)
GR/J49600/01 NOVEL TRANSPORT PHENOMENA IN ADVANCED SILICON STRUCTURES(P)
GR/J53959/01 INVESTIGATION OF A B ACCEPTOR STATES IN STRAINED HETEROEPITAXIAL SI AND SIGE.(P)
GR/H54836/01 THE DELTA DOPED BURIED CHANNEL MOSFET(P)
GR/J17234/01 THE DELTA DOPED BURIED CHANNEL MOSFET(P)
GR/J56813/01 THE DELTA DOPED BURIED CHANNEL MOSFET.(P)
GR/H86844/01 INVESTIGATION OF B ACCEPTOR STATES IN STRAINED HETEROEPITAXIAL SI AND SIGE(P)
GR/H85120/01 SILICON QUANTUM DEVICES AND NANOSTRUCTURES(P)
GR/H10795/01 LOW DIMENSIONAL PHENOMENA IN SILICON - PROPOSAL FOR FURTHER SUPPORT(C)
GR/G30645/01 LOW DIMENSIONAL PHENOMENA IN SILICON - INTERIM PROPOSAL(C)
GR/F36941/01 SILICON QUANTUM DEVICES AND NANOSTRUCTURES(P)
GR/F38587/01 THE DELTA DOPED BURIED-CHANNEL MOSFET(P)
GR/E28635/01 LOW DIMENSIONAL PHENOMENA IN SILICON(C)
Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator