EPSRC logo
Researcher Details
 
Name: Professor A O'Neill
Organisation: Newcastle University
Department: Sch of Engineering
Current EPSRC-Supported Research Topics:
Electric Motor & Drive Systems

Current EPSRC Support
EP/S024069/1 EPSRC Centre for Doctoral Training for Sustainable Electric Propulsion (CDT SEP)(C)
Previous EPSRC Support
EP/S032045/1 eFutures 2.0: Addressing Future Challenges(C)
EP/R00448X/1 Underpinning Power Electronics switch optimisation Theme(C)
EP/L025450/1 eFutures - maximizing the impact of electronics research in the UK(P)
NS/A000026/1 Controlling Abnormal Network Dynamics with Optogenetics (CANDO)(C)
EP/K028421/1 Multi-electrode electromyography: developing electrical cross-sectional imaging of skeletal muscle.(C)
EP/L007010/1 Underpinning Power Electronics 2012: Devices Theme(C)
EP/J010944/1 Atomic Layer Interface Engineering for Nanoelectronics (ALIEN): Contacts(P)
EP/I038357/1 eFuturesXD - crossing the boundaries(P)
EP/H048634/1 eFutures: university research in electronics(P)
EP/H023666/1 Ferroelectrics for Nanoelectronics (FERN)(P)
EP/H024476/1 Nano Lab Cross Disciplinary Feasibility Account(P)
EP/D068827/1 Technologies for SiC electronics and sensors in extreme environments(C)
EP/D036682/1 Platform: Strained Si / SiGe: Materials, Technology and Design(P)
GR/T18950/01 Strained Si/SiGe Virtual Substrate Heterojunction Bipolar Transistor(P)
GR/T06339/01 Integration of Microelectromechanical Systems (MEMS) with Electronics in Silicon Carbide for Harsh Environments(C)
GR/S97606/01 X-ray Propagation in Carbon Nanotubes: Proof of Concept(P)
GR/T07879/01 NETWORK:Silicon Research and Exploitation For the Nanotechnology Era(P)
GR/S80028/01 Power Electronics, Drives and Machines(C)
GR/S20420/01 Advancing Silicon Carbide Electronics Technology (ASCENT)(C)
GR/R99966/01 TCAD study of SiGe virtual substrate Heterojunction Bipolar Transistor(P)
GR/R96385/01 Platform: Silicon Carbide Electronic Systems(C)
GR/R99737/01 Engineering Doctorate Centre: POWER ELECTRONICS,DRIVES and MACHINES(C)
GR/N65653/01 SIGE FOR MOS TECHNOLOGIES(P)
GR/R37708/01 Electronics for extreme environments network (E3NET)(C)
GR/N32945/01 ULSI INTERCONNECTS: PROCESS MODELLING AND TEST FOR REL IABILITY AGAINST ELECTROMIGRATION AND STRESS-PROMOTES(P)
GR/M99835/01 NETWORK: SETNET -- SEMICONDUCTOR TEST NETWORK(C)
GR/L62320/01 SILICON CARBIDE ELECTRONICS FOR HIGH POWER HIGH TEMPERATURE APPLICATIONS (SCEPTRE)(C)
GR/L53731/01 SIGE FOR MOS TECHNOLOGIES(P)
GR/K50719/01 SYNTHESIS OF NOVEL POLYMERS CONTAINING AMINE OXIDES TO CONTROL MACROMOLECULAR CONFORMATION(P)
GR/K13837/01 RELIABILITY AND DESIGN RULES FOR DEEP SUBMICRON AND POWER INTEGRATED CIRCUIT INTERCONNECT TECHNOLOGY(P)
GR/J81167/01 CHIRAL AMINE OXIDES AS POWERFUL NEW REAGENTS IN ASYMMETRIC SYNTHESIS(P)
GR/K55882/01 SIGE/SI MONOLITHIC MICROWAVE INTEGRATED CIRCUIT TECHNOLOGY(P)
GR/J80474/01 THE SYNTHESIS AND APPLICATION OF OLIGONUCLEOTIDES CONTAINING CATALYTICALLY USEFUL 2'-SUBSTITUENTS.(C)
GR/J82034/01 SIGE/SI MONOLITHIC MICROWAVE INTEGRATED CIRUIT TECHNOLOGY(P)
GR/J46241/01 HIGH SPEED VERTICAL POWER DEVICES FOR SWITCHING APPLICATIONS USING III-V SEMICONDUCTOR TECHNOLOGY(P)
GR/H85335/01 DELTA-DOPED BURIED CHANNEL MOSFET-A NEW DEVICE FOR SUBMICRON CMOS(P)
GR/F69154/01 TEACHING CO. PROGRAMME BETWEEN NOTTINGHAM . POLYTECHNIC AND W A METROLOGY(P)
GR/F38594/01 DELTA-DOPED BURIED CHANNEL MOSFET- A NEW DEVICE FOR SUB-MICRON CMOS TECHNOLOGY(P)
Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator