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| Name: |
Dr RP Campion |
| Organisation: |
University of Nottingham |
| Department: |
Sch of Physics & Astronomy |
| Current EPSRC-Supported Research
Topics: |
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Cold Atomic Species
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Condensed Matter Physics
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Magnetism/Magnetic Phenomena
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Quantum Fluids & Solids
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Quantum Optics & Information
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| Current EPSRC Support |
| EP/V004751/1 | Acoustic control of quantum cascade heterostructures: the THz "S-LASER" | (C) |
| EP/V031201/1 | Novel non-equilibrium states of matter in periodically driven spin systems: from time crystals to integrated thermal machines | (C) |
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| Previous EPSRC Support |
| EP/R024111/1 | OPTAMOT: Optimised Designs for Additively Manufactured Magneto Optical Traps | (C) |
| EP/P019749/1 | Antiferromagnetic devices for spintronic memory applications | (C) |
| EP/M016161/1 | Acoustoelectric Methods for the Generation Manipulation and Detection of THz Radiation | (C) |
| EP/M013294/1 | UK Quantum Technology Hub for Sensors and Metrology | (C) |
| EP/K008323/1 | Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices. | (C) |
| EP/K027808/1 | Development of new CuMn-V epitaxial antiferromagnetic semiconductors for applications in spintronics | (P) |
| EP/I035501/1 | Solar cells based on InGaN nanostructures | (C) |
| EP/I004203/1 | Amorphous and crystalline GaNAs alloys for solar energy conversion devices | (C) |
| EP/H002294/1 | Spin Transfer Torque in Ferromagnetic Semiconductors and Hybrid Devices for Nanospintronics | (C) |
| EP/G030634/1 | Feasibility study of plasma-assisted electroepitaxy for the growth of GaN layers and bulk crystals | (C) |
| EP/G035202/1 | Terahertz acoustic laser (saser) devices: fabrication and characterisation | (C) |
| EP/G046867/1 | Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy | (C) |
| TS/G001448/1 | Green Laser Diodes | (C) |
| EP/G007160/1 | Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting | (C) |
| EP/F019076/1 | Defect reduction in GaN using the in-situ growth of transition metal nitride layers | (C) |
| EP/D051487/1 | Investigation of growth kinetics and incorporation of impurities in group III-nitrides and group III-dilute nitrides using mass spectroscopy | (C) |
| EP/E000673/1 | Growth of thick and flat high quality GaN using nano-column compliant layers | (P) |
| EP/C548825/1 | Feasibility study of zinc-blende AIGaN heterojunction bipolar transistors | (C) |
| EP/C526546/1 | Probing the electronic, magnetic and structural properties of ferromagnetic semiconductors | (C) |
| GR/S81407/01 | Ferromagnetic Semiconductors: Materials Development & Spintronic Devices | (R) |
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Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator
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