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Researcher Details
 
Name: Dr RP Campion
Organisation: University of Nottingham
Department: Sch of Physics & Astronomy
Current EPSRC-Supported Research Topics:
Magnetism/Magnetic Phenomena

Current EPSRC Support
EP/P019749/1 Antiferromagnetic devices for spintronic memory applications(C)
EP/M013294/1 UK Quantum Technology Hub for Sensors and Metrology(C)
Previous EPSRC Support
EP/R024111/1 OPTAMOT: Optimised Designs for Additively Manufactured Magneto Optical Traps(C)
EP/M016161/1 Acoustoelectric Methods for the Generation Manipulation and Detection of THz Radiation(C)
EP/K008323/1 Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices.(C)
EP/K027808/1 Development of new CuMn-V epitaxial antiferromagnetic semiconductors for applications in spintronics(P)
EP/I035501/1 Solar cells based on InGaN nanostructures(C)
EP/I004203/1 Amorphous and crystalline GaNAs alloys for solar energy conversion devices(C)
EP/H002294/1 Spin Transfer Torque in Ferromagnetic Semiconductors and Hybrid Devices for Nanospintronics(C)
EP/G030634/1 Feasibility study of plasma-assisted electroepitaxy for the growth of GaN layers and bulk crystals(C)
EP/G035202/1 Terahertz acoustic laser (saser) devices: fabrication and characterisation(C)
EP/G046867/1 Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy(C)
TS/G001448/1 Green Laser Diodes(C)
EP/G007160/1 Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting(C)
EP/F019076/1 Defect reduction in GaN using the in-situ growth of transition metal nitride layers(C)
EP/D051487/1 Investigation of growth kinetics and incorporation of impurities in group III-nitrides and group III-dilute nitrides using mass spectroscopy(C)
EP/E000673/1 Growth of thick and flat high quality GaN using nano-column compliant layers(P)
EP/C548825/1 Feasibility study of zinc-blende AIGaN heterojunction bipolar transistors(C)
EP/C526546/1 Probing the electronic, magnetic and structural properties of ferromagnetic semiconductors(C)
GR/S81407/01 Ferromagnetic Semiconductors: Materials Development & Spintronic Devices(R)
Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator