| EPSRC Reference: |
GR/T21516/01 |
| Title: |
Carrier recombination in 1.3micron GaAsSb/GaAs-based Edge-emitting & Surface-emitting lasers |
| Principal Investigator: |
Sweeney, Professor SJ |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Advanced Technology Institute |
| Organisation: |
University of Surrey |
| Scheme: |
First Grant Scheme Pre-FEC |
| Starts: |
12 January 2005 |
Ends: |
11 April 2007 |
Value (£): |
120,916
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| EPSRC Research Topic Classifications: |
| Condensed Matter Physics |
Materials Characterisation |
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| EPSRC Industrial Sector Classifications: |
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| Panel History: |
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Summary on Grant Application Form |
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Semiconductor lasers have become an essential optical component that today pervades most of our lives in everyday appliances such as CD/DVD systems, laser printers, laser pointers and are now starting to find applications in medicine and sensing applications. Semiconductor lasers have contributed most to society as sources for optical fibre communications. Whilst long haul communications systems run below full capacity, the current communications bottle-neck has arisen due to problems communicating over relatively short distances, for example between cities and in metropolitan areas. This is the greatest challenge in optical communications, and requires new, improved semiconductor lasers. Vertical Cavity Surface Emitting Lasers (VCSELs) emitting at 1.3microns are the preferred type of laser for this application owing to the fact that they are inexpensive to produce and have uniform characteristics. The wavelength is important as it corresponds to the zero dispersion point of standard silica fibre enabling fast, error free communication. To date, it has been very difficult to produce reliable VCSELs at this wavelength, largely owing to material quality difficulties. This proposal aims to investigate VCSELs based upon GaAsSb/GaAs Quantum Well structures which have begun to show promising results. However, at present, little work has been carried out on this material and fundamental questions remain about its band alignment and the important current paths in the material which affect its efficiency and temperature stability.At Surrey, we have developed specialised experimental tools for investigating the properties of semiconductor lasers such as low temperature and high pressure measurements which may be used to analyse the processes that control their efficiency and temperature stability. To complement this, Arizona State University has produced some of the best GaAsSb based lasers to date and will be supplying devices to this project. The investigator therefore now has a great opportunity to gain further insight into this new and potentially valuable material and to begin UK research in this area. This project will add significantly to the literature regarding this material which will be of use to fellow scientists and engineers in both the academic and industrial communities.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.surrey.ac.uk |