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Details of Grant 

EPSRC Reference: GR/T21516/01
Title: Carrier recombination in 1.3micron GaAsSb/GaAs-based Edge-emitting & Surface-emitting lasers
Principal Investigator: Sweeney, Professor SJ
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Arizona State University
Department: Advanced Technology Institute
Organisation: University of Surrey
Scheme: First Grant Scheme Pre-FEC
Starts: 12 January 2005 Ends: 11 April 2007 Value (£): 120,916
EPSRC Research Topic Classifications:
Condensed Matter Physics Materials Characterisation
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
Semiconductor lasers have become an essential optical component that today pervades most of our lives in everyday appliances such as CD/DVD systems, laser printers, laser pointers and are now starting to find applications in medicine and sensing applications. Semiconductor lasers have contributed most to society as sources for optical fibre communications. Whilst long haul communications systems run below full capacity, the current communications bottle-neck has arisen due to problems communicating over relatively short distances, for example between cities and in metropolitan areas. This is the greatest challenge in optical communications, and requires new, improved semiconductor lasers. Vertical Cavity Surface Emitting Lasers (VCSELs) emitting at 1.3microns are the preferred type of laser for this application owing to the fact that they are inexpensive to produce and have uniform characteristics. The wavelength is important as it corresponds to the zero dispersion point of standard silica fibre enabling fast, error free communication. To date, it has been very difficult to produce reliable VCSELs at this wavelength, largely owing to material quality difficulties. This proposal aims to investigate VCSELs based upon GaAsSb/GaAs Quantum Well structures which have begun to show promising results. However, at present, little work has been carried out on this material and fundamental questions remain about its band alignment and the important current paths in the material which affect its efficiency and temperature stability.At Surrey, we have developed specialised experimental tools for investigating the properties of semiconductor lasers such as low temperature and high pressure measurements which may be used to analyse the processes that control their efficiency and temperature stability. To complement this, Arizona State University has produced some of the best GaAsSb based lasers to date and will be supplying devices to this project. The investigator therefore now has a great opportunity to gain further insight into this new and potentially valuable material and to begin UK research in this area. This project will add significantly to the literature regarding this material which will be of use to fellow scientists and engineers in both the academic and industrial communities.
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Organisation Website: http://www.surrey.ac.uk