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Details of Grant 

EPSRC Reference: GR/T04786/01
Title: Ferromagnetism in Doped ZnO
Principal Investigator: Driscoll, Professor JL
Other Investigators:
Cohen, Professor LF Barber, Professor Z Blamire, Professor M
Researcher Co-Investigators:
Project Partners:
Department: Materials Science & Metallurgy
Organisation: University of Cambridge
Scheme: Standard Research (Pre-FEC)
Starts: 12 August 2004 Ends: 11 September 2005 Value (£): 62,272
EPSRC Research Topic Classifications:
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The filed of microelectronics could be revolutionised if devices could be made in which spin polarised electrons are injected into semiconductors and it promises new logic devices with enhanced functionality, higher speeds and reduced power consumption. A spin injector material is required which is highly spin polarised, has a Curie temperatire above room temperature, us chemically conmpatible with semiconductors, and can be grown at low temperatures. No ideal system has uyet been idetified although a range of dilute magnetic semiconductors have been investigated. Doped ZnO is a promising candidate ferromagnetic spin injector material. The route by which doped magnetic oxide is processed appears to be critical to properties. In this one-year VF proposal, we aim to produce well-controlled, doped material in bulk and expitaxial film form by using low temperature solution routes and by implementing thermochemical annealing to control defects.
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Organisation Website: http://www.cam.ac.uk