Details of Grant 

EPSRC Reference:	GR/S96760/01
Title:	Electically Active Defects and Carrier Trapping in Semiconducting Diamond
Principal Investigator:	Evans-Freeman, Professor J
Other Investigators:
Researcher Co-Investigators:
Project Partners:	Element Six Limburgs University National Institute for Materials Science United States Naval Research Laboratory University of Bristol
Department:	Materials Research Institute
Organisation:	Sheffield Hallam University
Scheme:	Standard Research (Pre-FEC)
Starts:	19 July 2004	Ends:	18 September 2008	Value (£):	207,706
EPSRC Research Topic Classifications:	Electronic Devices & Subsys. Materials Characterisation
EPSRC Industrial Sector Classifications:	Electronics
Related Grants:	GR/S96784/01 GR/S96777/01
Panel History:
Summary on Grant Application Form
One of the important problems in the development of carbon-based electronics is the scattering and trapping of carriers (electrons and holes) at defects and impurities in the material. This limits the speed, efficiency and ultimately the exploitation of the material. The ultimate properties of diamond are such that it is potentially the material of choice for high-power, high-temperature and high-frequency electronic devices. Exploitation of diamond will only be possible if the detrimental defects and Impurities can be identified and removed or tamed. While we know quite a lot about the defects themselves, and about the electronic properties of the material, we do not know which of the defects and Impurities are the major trapping or scattering centres, and which should be eliminated or reduced in order to improve then materials electronic properties.In this project, we bring together four experimental techniques supported by theoretical modelling to help to interpret the experimental results, to try to address these issues. The experimental techniques are electrically detected electron paramagnetic resonance (ED-EPR), Laplace Deep level Transient spectroscopy (L-DLTS), Fourier Transform photocurrent spectroscopy (FTPS) and conducting atomic force microscopy (C-AFM). They will be applied first to diamond, and then assessed for their usefulness on other carbon-based materials. The project will contribute these techniques to the Carbon based Electronics national consortium, for use on all the materials being researched.
Key Findings
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Potential use in non-academic contexts
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Project URL:
Further Information:
Organisation Website:	http://www.shu.ac.uk