| EPSRC Reference: |
GR/S75826/01 |
| Title: |
Room Temperature Mid-Infrared Diode Lasers Based on Novel 5-Component III-V Alloys |
| Principal Investigator: |
Krier, Professor A |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
Lancaster University |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 April 2004 |
Ends: |
30 June 2007 |
Value (£): |
251,441
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| EPSRC Research Topic Classifications: |
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| EPSRC Industrial Sector Classifications: |
| Aerospace, Defence and Marine |
Electronics |
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| Related Grants: |
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| Panel History: |
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Summary on Grant Application Form |
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Mid-infrared (2-5m) diode lasers have considerable potential for applications in a number of areas, but their commercial development has so far been hindered by the need for cryogenic cooling. In order to increase operation temperatures, the threshold current density must be reduced by the suppression of absorption losses and Auger scattering which is the dominant non-radiative recombination mechanism in narrow gap III-V semiconductors at room temperature. The basic idea of this proposal is to take advantage of the additional degree of freedom afforded in the 5-component alloys to independently tailor the valence band splitting (aso) to reduce inter-valence band absorption (IVBA) and Auger recombination.Furthermore, by using 5-component alloys we shall be able to realise highly effective simultaneous carrier and optical confinement in a narrow gap system for the first time. This will enable us to fabricate a high quality lattice-matched type I double heterostructure laser (similar to that in AIGaAs/GaAs at shorter wavelengths) and to obtain room temperature operation.Our proposed approach is aimed at demonstrating a novel pentenary mid-infrared diode laser and along the way we shall uncover a wealth of scientific information of interest to the academic community. For example, we shall obtain information about; spin-orbit valence band splitting Aso, resonance with the bandgap, its influence on CHSH Auger scattering and intervalence-band absorption in these alloys; epitaxial growth of pentenary alloys and conditions to achieve structural perfection and maximum PL efficiency; bandoffsets, confinement of electrons and holes in a novel narrow gap type I system; refractive indices and optical confinement, carrier leakage, and gain in the corresponding laser etc.We note that there is no work on pentenary 5-component III-V alloys within the UK and our proposed approach is effective and unique.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.lancs.ac.uk |