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Details of Grant 

EPSRC Reference: GR/S68910/01
Title: High power RF/microwave MEMS switches
Principal Investigator: Hong, Professor J
Other Investigators:
Desmulliez, Professor M
Researcher Co-Investigators:
Project Partners:
BAE Systems
Department: Sch of Engineering and Physical Science
Organisation: Heriot-Watt University
Scheme: Standard Research (Pre-FEC)
Starts: 01 April 2004 Ends: 30 September 2005 Value (£): 73,045
EPSRC Research Topic Classifications:
Electromagnetics Microsystems
RF & Microwave Technology
EPSRC Industrial Sector Classifications:
Aerospace, Defence and Marine Communications
Energy
Related Grants:
GR/S68903/01
Panel History:  
Summary on Grant Application Form
With the advent of micromachining technologies, MEMS switches have recently emerged as enabling devices for improving the cost-effect performance of microwave switching networks and systems. The near-zero power consumption, low intermodulation products, very high isolation and very low insertion loss are clearly properties that have attracted considerable research effort. However, the currently reported RF/microwave MEMS switching devices are only capable of handling several hundred milliwatts to a few watts microwave power before device failure. Evidently, there will be challenges in developing high power RF /microwave MEMS switches which, however, are of interest for many applications.This proposed research aims to develop advanced RF/microwave MEMS switches that are capable of handling higher power, say larger than 10 Watts. New high power RF MEMS SPST and SPDT switches will be designed, fabricated and tested. A novel pull-push DC bias scheme will be investigated.
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Further Information:  
Organisation Website: http://www.hw.ac.uk