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Details of Grant 

EPSRC Reference: GR/S55774/01
Title: Multiple quantum barrier reflectors for 630nm laser diodes
Principal Investigator: Wilks, Professor S
Other Investigators:
Mawby, Professor P
Researcher Co-Investigators:
Project Partners:
Department: Electrical & Electronic Engineering
Organisation: Swansea University
Scheme: Standard Research (Pre-FEC)
Starts: 01 May 2003 Ends: 30 November 2003 Value (£): 27,047
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
GR/S55767/01
Panel History:  
Summary on Grant Application Form
This research has the overall aim to achieve significant reductions in carrier leakage in AIGaInP lasers using MQB structures to enable manufacturable 630nm lasers to be made with acceptable threshold current density and much reduced temperature sensitivity of threshold current. The key elements of this research are that (i) the reflectors are designed to take account of carrier loss through the X conduction band minima, (ii) the grown structures are being evaluated by scanning probe microscopy/spectroscopy to measure the quantum mechanical enhancement and (iii) direct measurements are being made of carrier leakage. We propose to introduce new features in the design to enable the structures to be manufactured using current commercial growth techniques.
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Further Information:  
Organisation Website: http://www.swan.ac.uk