Details of Grant 

EPSRC Reference:	GR/S52216/01
Title:	Material Processing For Advanced Semiconductor Devices
Principal Investigator:	Wright, Professor NG
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department:	Electrical, Electronic & Computer Eng
Organisation:	Newcastle University
Scheme:	Advanced Fellowship (Pre-FEC)
Starts:	01 September 2003	Ends:	30 April 2008	Value (£):	240,758
EPSRC Research Topic Classifications:	Electronic Devices & Subsys. Materials Processing
EPSRC Industrial Sector Classifications:	Electronics
Related Grants:
Panel History:	Panel Date Panel Name Outcome 28 May 2003 Materials Fellowships Imterview Panel 2003 Deferred 25 Apr 2003 Materials Fellowships Sift Panel 2003 Deferred
Summary on Grant Application Form
The proposed research is based on two themes: firstly the development of new processing techniques for electronic devices made from the novel semiconductor silicon carbide and secondly the advancement of fundamental understanding of novel dielectric films for advanced electronics. It is now well-established that silicon carbide (SiC) electronic systems will perform an enabling function in the energy and transport technologies of the 21st century. Their inherent ability to operate at high temperatures will facilitate technological advances in transport sectors whilst grid-connected power electronic systems will benefit from improved efficiency and a reduced environmental footprint. The research proposed at the forefront of this exciting technology - offering a genuine opportunity to build a world-class capability. The second theme (high-k dielectrics) is based on improving fundamental understanding of basic current mechanisms and reliability properties are affected by film microstructure.
Key Findings
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Potential use in non-academic contexts
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Impacts
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Sectors submitted by the Researcher
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Project URL:	http://www.ncl.ac.uk/eece/research/groups/etm/etm-sic.htm
Further Information:
Organisation Website:	http://www.ncl.ac.uk