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Details of Grant 

EPSRC Reference: GR/S50243/01
Title: High Power Integrated Circuit Technology Development
Principal Investigator: Igic, Professor P
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Electrical & Electronic Engineering
Organisation: Swansea University
Scheme: Advanced Fellowship (Pre-FEC)
Starts: 01 October 2003 Ends: 30 September 2008 Value (£): 224,006
EPSRC Research Topic Classifications:
Power Electronics Sustainable Energy Networks
EPSRC Industrial Sector Classifications:
Energy
Related Grants:
Panel History:
Panel DatePanel NameOutcome
28 May 2003 Engineering Advanced Fellowships Interview Panel Deferred
02 May 2003 Engineering Fellowships Sift Panel 2003 Deferred
Summary on Grant Application Form
It will be the aim of this project to create a technology for High PowerNoltage Integreted Circuits. To achieve this completely novel process, that will allow the integration of more than one vertical power device together with low voltage (control) circuitry, power devices being dielectrically isolated from each other and from the logic circuits have to be developed. In addition, the more advanced 2D and 3D RESURF devices (low to medium voltage devices) will be investigated and developed, since they are needed, together with the low voltage BiCMOS circuitry, to drive these high voltage devices. A very important task of the project will be development of the Active Junction Isolation structure to isolate these medium power devices from each other as well as from the low voltage BiCMOS circuitry. Research in to new effective packaging that will be able to handle these new PICs will be undertaken as well. Finally,several analogue circuits for power application will be designed. Extensive use of TCAD will be made(using AVANT! TCAD and CADENCE IC Design Tools) as well as experimental work (manufacturing and testing of the designed devices, isolation structures and PICs).
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Organisation Website: http://www.swan.ac.uk