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Details of Grant 

EPSRC Reference: GR/S49308/01
Title: Long wavelength GaAs-based QD Lasers.
Principal Investigator: Mowbray, Professor D
Other Investigators:
Fox, Professor AM Skolnick, Professor M Hopkinson, Professor M
Researcher Co-Investigators:
Project Partners:
Department: Physics and Astronomy
Organisation: University of Sheffield
Scheme: Standard Research (Pre-FEC)
Starts: 01 December 2003 Ends: 31 May 2007 Value (£): 182,101
EPSRC Research Topic Classifications:
Lasers & Optics Optical Devices & Subsystems
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
GR/S49315/01
Panel History:  
Summary on Grant Application Form
Using a number of novel growth techniques we will extend the emission range of GaAs-based QD lasers to the important telecommunications range of 1.3-1.6um. Making use of the many advantageous properties of QD lasers compared to quantum well lasers we will apply optimised device designs to a number of specific applications. We will also study physical processes in these highly novel systems. More specifically we will:(i) Employ novel growth techniques, including the use of N and Sb containing QDs, to extend the lasing wavelength of a GaAs-based system to cover the 1.3-1.6um spectral region.(ii) Investigate the use of P based cladding layers to eliminate AIGaAs related non-radiative centres which presently limit the high temperature performance of QD lasers(iii) Utilise the inhibitted carrier diffusion provided by a QD active region to facilitate the fabricate with single step growth of high performance lasers. We will also investigate limits on the volume of the active region in very small volume devices. (iv) Study carrier dynamics in QD lasers using cw and time resolved techniques.
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Organisation Website: http://www.shef.ac.uk