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Details of Grant 

EPSRC Reference: GR/S44280/01
Title: Chemistry, Structure and Bonding in High-k Gate Oxide Stacks
Principal Investigator: Craven, Professor A
Other Investigators:
McComb, Professor DW
Researcher Co-Investigators:
Dr M MacKenzie
Project Partners:
IMEC International SEMATECH
Department: School of Physics and Astronomy
Organisation: University of Glasgow
Scheme: Standard Research (Pre-FEC)
Starts: 01 April 2004 Ends: 30 September 2007 Value (£): 425,575
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:
Panel DatePanel NameOutcome
19 Mar 2003 Elec & Functional Mats Panel (Tech) - Mar 2003 Deferred
Summary on Grant Application Form
The semiconductor industry has relied on Si02 for many years to provide the insulating gate oxide in semiconductor devices because it provides low leakage, high channel mobility, stability during processing and long term reliability. However as the drive towards smaller devices continues apace, the oxide layer becomes too thin to remain insulating and must be replaced by a material with a higher dielectric constant, k. Replacing it while maintaining the other key properties is certainly proving to be a grand challenge and is likely to be one of the most difficult technological roadblocks to overcome in the semiconductor roadmap. A complete understanding of the structure-property-processing relationship on the sub-nanometre scale for the candidate high-k replacements in contact with the semiconductor and electrode materials is essential. This can only be achieved with the help of the state-ofthe-art nano-analytical electron microscopy techniques that we have been developing at the University of Glasgow. We propose to use these techniques to probe the chemistry, structure and bonding in a range of high-k materials in collaboration with researchers at IMEC and International Sematech. This collaboration will allow Glasgow access to materials processed and characterised by leading experts in the field. The fundamental understanding derived from applying our methods to such systems will provide essential information in a fast moving, highly visible field with major economic implications.
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