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Details of Grant 

EPSRC Reference: GR/S42859/01
Title: Exploratory proposal to grow and characterise gallium nitride on silicon
Principal Investigator: Humphreys, Professor Sir C
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Thomas Swan
Department: Materials Science & Metallurgy
Organisation: University of Cambridge
Scheme: Standard Research (Pre-FEC)
Starts: 01 February 2003 Ends: 30 April 2003 Value (£): 53,664
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The main substrates used throughout the world for the growth of GaN are sapphire and silicon carbide. All of our growth at Cambridge so far has been on sapphire substrates. This proposal is to initiate at Cambridge the growth of high quality GaN on Si, both using an AIN buffer layer and also innovatively to investigate the use of oxide intermediate layers. We will characterise the samples grown using a wide range of techniques, including electron microscopy, AFM, high resolution x-ray diffraction, photo-luminescence and Hall measurements. If high quality GaN can be grown on Si this will be a major advance in the growth of GaN.
Key Findings
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Summary
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Organisation Website: http://www.cam.ac.uk