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Details of Grant 

EPSRC Reference: GR/S25630/01
Title: Microstructural characterisation of III-V spintronic, photonic and electronic heterostructures
Principal Investigator: Brown, Professor PD
Other Investigators:
Gallagher, Professor B L Harrison, Dr I Foxon, Professor CT
Larkins, Professor E
Researcher Co-Investigators:
Project Partners:
Department: Sch of Mech Materials Manuf Eng Mgt
Organisation: University of Nottingham
Scheme: Standard Research (Pre-FEC)
Starts: 01 April 2003 Ends: 30 September 2006 Value (£): 241,779
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. Materials Characterisation
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
We seek funds for a named postdoctoral research worker to perform much needed microstructural characterisation of a specified setof III-V functional device structures, to underpin a range of on-going EPSRC and European research, programmes at Nottingham. Thedominant theme is the application of microanalytical assessment techniques to investigate the critical Materials issues within spintronicheterostructures based on the (Ga,Mn)N, (Ga,Mn)As and (Ga,Mn)P dilute magnetic semiconductors (DMS) as a function of growth anddevice processing. This will lead to the development of novel Mn 8-doped and acceptor co-doped DMS alloys for room temperatureferromagnetic devices, with interface integrity, alloy uniformity, and contacts to p-type doped layers being the focus of attention. Theapproach is to combine our expertise in the areas of epitaxial growth, device processing and materials characterisation to resolve thelimiting problems for the future development of this technology. This approach will be similarly applied to the development of Ga(N,As)photonic and (AI,Ga)N/GaN electronic device structures.
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Further Information:  
Organisation Website: http://www.nottingham.ac.uk