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Details of Grant 

EPSRC Reference: GR/S20062/01
Title: Preliminary Evaluation of Indium Interactions in Silicon for Ulsi Technologies
Principal Investigator: de Souza, Professor MM
Other Investigators:
Oxley, Professor D
Researcher Co-Investigators:
Project Partners:
Texas Instruments Inc
Department: Emerging Technologies Research Centre
Organisation: De Montfort University
Scheme: Standard Research (Pre-FEC)
Starts: 01 February 2003 Ends: 31 March 2005 Value (£): 62,980
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
This research proposal combines the approach of pseudopotential calculations and kinetic Monte Carlo/continuum modelling to evaluate the mechanisms of defect cluster formation of a promising new dopant- indium in silicon. Indium has the capability to achieve retrograde doping profiles required in future ULSI technologies. However, Indium suffers from poor activation and a two-peak profile due to segregation and defect clustering. Default models in commercial software, and diffusion models of boron are found totally inadequate for describing this peculiar behaviour. This proposal will therefore help establish a timely UK presence in this area. Using ab initio pseudopotential calculations, an exploration of the defect configuration space will be made, with incorporation of charge state effects. This will allow mechanisms of cluster growth to be indentified. Issues involved with multiple implant will also be studied. An elementary kinetic Monte Carlo model for equilibrium diffusion of indium will be established and compared against experimental data.If the feasibility study is successful, it will pave way for a full proposal with strategies to overcome the problems of activation and dual peak profile.
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Organisation Website: http://www.dmu.ac.uk