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Details of Grant 

EPSRC Reference: GR/S12937/01
Title: MgB2 Thin Films and Devices
Principal Investigator: Blamire, Professor M
Other Investigators:
Barber, Professor Z Tarte, Dr EJ Driscoll, Professor JL
Researcher Co-Investigators:
Project Partners:
Department: Materials Science & Metallurgy
Organisation: University of Cambridge
Scheme: Standard Research (Pre-FEC)
Starts: 01 April 2003 Ends: 31 March 2006 Value (£): 154,749
EPSRC Research Topic Classifications:
Materials Characterisation Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
MgB2 has the potential to offer a combination of the desirable aspects of Nb and YBCO enabling a device technology based on polycrystalline thin films operating at 30K. Initial funding provided by EPSRC has been invaluable in enabling us to initiate a internationally-competitive research programme and to arrive at a clear assessment of the appropriate approach to thin film and device fabrication. Thin film growth is complicated by the extreme sensitivity of the material to oxidation and the very high vapour pressure of Mg at the temperatures required for high quality thin film growth. Because ex-situ post-annealing is incompatible with heterostructure growth, if MgB2 is to be competitive with Nb technology it is essential that device heterostructures can be grown in-situ. Since optimum growth conditions are above 800C we intend to develop a high pressure laser ablation process (HPLA) in which a B target is ablated in the presence of a high Mg vapour pressure. We intend to fabricate a range of single-layer and heterostructure devices, both for the development of SQUIDs as well as to perform measurements of fundamental materials properties.
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Organisation Website: http://www.cam.ac.uk