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Details of Grant 

EPSRC Reference: GR/R99966/01
Title: TCAD study of SiGe virtual substrate Heterojunction Bipolar Transistor
Principal Investigator: O'Neill, Professor A
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Electrical, Electronic & Computer Eng
Organisation: Newcastle University
Scheme: Standard Research (Pre-FEC)
Starts: 01 July 2002 Ends: 31 December 2002 Value (£): 15,126
EPSRC Research Topic Classifications:
Electronic Devices & Subsys.
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
A SiGe virtual substrate Heterojunction. Bipolar Transistor {HBT} offers a new parameter space to explore in order to opti mize key bipolar transistor metrics. Combined with strained &'SiGe HMOS, under development by Newcastle University and others in a UK consortium it may offer the prospect of heterojunction BiCMOS (HBiCMOS). In this short research project, there is time to undertake a design study of virtual substrate HBTs using technology computer aided design (TCAD). The design study will aim to investigate two virtual substrate regimes and compare these with simulated and experimental data for a conventional [pseudomorphic) HBT. The first regime will be a virtual substrate of 15 ` Ge composition. The HCMOS technology based on this alloy composition is currently being pursued by Newcastle University as part of EPSRC gra^t SiGe for MOS Technologies II (GR/N65653). The second virtual substrate composition is 30 % Ge, which was pursued for HMOS prior to this.
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Organisation Website: http://www.ncl.ac.uk