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Details of Grant 

EPSRC Reference: GR/R96927/01
Title: Fundamental Research on Semiconductor Quantum-Dot Lasers and Amplifiers for Next-Generation Optical Networks
Principal Investigator: Littlewood, Professor P
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: University of Cambridge
Scheme: Standard Research (Pre-FEC)
Starts: 09 August 2002 Ends: 08 February 2003 Value (£): 10,148
EPSRC Research Topic Classifications:
Condensed Matter Physics Lasers & Optics
Materials Characterisation Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Communications Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Fundamental research on a new type of quantum-dot laser, which employs an auxiliary quantum well coupled to the quantum dots by tunneling through a thin barrier, is proposed. Tunneling injection of carriers into the quantum dots via quantum wells is important in determining the carrier collection by the active quantum dots, where optical stimulation and laser action occur. This structure overcomes the limitations of carrier collection, lateral transport, and thermalization of the quantum dots. We will develop a theory for electron and hole dynamics in the coupled quantum-dot and quantum-well structures and investigate their electronic and optical properties. We then investigate the optical gain and the effects of temperature and impurity dopings. We will also examine the fundamental problem of where it is advantageous, and in what heterostructure configuration, to employ layers of undoped or doped quantum dots. This research on a tunneling injection quantum-dot laser is important not only for fundamental science, but will impact the design of semiconductor lasers as transmitters for fiber optical networks in Internet technology.
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Organisation Website: http://www.cam.ac.uk