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Details of Grant 

EPSRC Reference: GR/R89738/01
Title: Atomistic Simulation of Nanoscale Devices
Principal Investigator: Asenov, Professor A
Other Investigators:
Barker, Professor JR Roy, Professor S
Researcher Co-Investigators:
Dr K Kalna Dr J Watling
Project Partners:
Department: Electronics and Electrical Engineering
Organisation: University of Glasgow
Scheme: Platform Grants (Pre-FEC)
Starts: 01 October 2002 Ends: 30 September 2007 Value (£): 429,564
EPSRC Research Topic Classifications:
Electronic Devices & Subsys.
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
The International Technology Roadmap for Semiconductors has recently undergone dramatic acceleration. The draft of the 2001 edition predicts that devices with channel lengths 22, 11 and 4.2 nm will be in mass production in 2008, 2014 and 2023 respectively. At such nanometer scales the active region of a MOSFET becomes comparable to the size of a large molecule. We aim to develop simulation methods and tools that will bridge the gap between the present continuous classical and quantum semiconductor device simulation approaches and the ab-initio methods of quantum chemistry in describing with progressive accuracy phenomena related to (i) the discreteness of charge and matter at individual dopant and carrier level; (ii) quantum transport at atomic scales; (iii) Statistical intrinsic parameter fluctuations associated with random dopants, imperfect interfaces, boundaries and contacts in ultra small devices. Such methods and tools will also be relevant for simulation of molecular and bio-molecular structures and devices for the post-silicon era and we would like to establish a presence in this area.
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Organisation Website: http://www.gla.ac.uk