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EPSRC Reference: GR/R82630/01
Title: Optical and electronic properties of the dilute nitrides GaSb1-xNx and InSb1-xNx
Principal Investigator: Murdin, Professor BN
Other Investigators:
Adams, Professor A Allam, Professor J Hosea, Dr TJC
Andreev, Dr A Lancefield, Dr D
Researcher Co-Investigators:
Professor E O'Reilly
Project Partners:
Defence Science and Technology Laborator University College Cork
Department: Sch of Electronics & Physical Sciences
Organisation: University of Surrey
Scheme: Standard Research (Pre-FEC)
Starts: 01 January 2003 Ends: 31 August 2006 Value (£): 304,689
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
All 'conventional' III-V semiconductor alloys behave in a qualitatively similar manner, e.g. they obey k.p theory in which the parameters (e.g. p2) are similar. However'dilute nitrides' are dramatically different. They exhibit extreme bowing of the energy gap with composition and spectroscopy reveals resonant localised states strongly interacting with the conduction band. They deviate from conventional k.p theory in a way that may be advantageous for e.g. interband lasers. Our recent work on GaInNAs has provided an understanding of these effects (related to the lattice distortion associated with N atoms). We predict even stronger effects in dilute nitride antimonides (III-SbN), where the narrow gap III-Sb may be made zero gap by the addition of only a few atomic % of N. We shall perform spectroscopy and transport on GaSbN and InSbN to investigate the basic physics and determine parameters of this new class of materials. A range of samples will be used, and the bandstructure and resonant N levels further controlled by the application of hydrostatic pressure. This new degree of freedom will facilitate the band-structure engineering of structures with improved properties for mid-IR light emitters.
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Organisation Website: http://www.surrey.ac.uk