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EPSRC Reference: GR/R74116/01
Title: Defect Evolution due to Oxygen Hydrogen Passivation of CulnSe2 (CIS)
Principal Investigator: Yakushev, Dr M
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: University of Strathclyde
Scheme: Fast Stream
Starts: 01 March 2002 Ends: 28 February 2005 Value (£): 60,747
EPSRC Research Topic Classifications:
Materials Characterisation Solar Technology
EPSRC Industrial Sector Classifications:
Energy
Related Grants:
Panel History:  
Summary on Grant Application Form
A study of physical mechanisms of defect passivation by oxygen and hydrogen in CuInSe2 (CIS) single crystals is proposed. High starting quality of tl material will allow analysis of the passivation processes using exciton-related peaks in the photoluminescence (PL) spectrum. Intensity of the emissio associated with excitons bound to defects will be used as quantitative indicators of the defect concentration. A pilot study of magneto-PL effects in CI: will help to identify the nature of the observed efccitonic peaks. CIS single crystals will be implanted with low energy hydrogen or air-annealed to introduce oxygen. Changes in the bound exciton peak amplitudes following introduction of hydrogen or oxygen will clarify which particular defect was affected by the treatment. Evolution of free exciton peaks will give information on changes in the electronic structure and the lattice stress due to pas sivation. Then CdS layers will be deposited upon CIS and CdS/CIS structures will be incorporated with hydrogen/oxygen and analysed. Regimes of passivation beneficial for the optical and electrical properties of CIS will be found. Understanding of passivation physics will help to develop technologies for selective elimination of the influence of unwanted defect populations and improve performance of photovoltaic devices.
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Organisation Website: http://www.strath.ac.uk