| EPSRC Reference: |
GR/R70897/01 |
| Title: |
ROPA: Study of optical absorption and emission of InN: using pressure to vary nanocrystallite size and structure. |
| Principal Investigator: |
Bayliss, Professor S |
| Other Investigators: |
|
| Researcher Co-Investigators: |
|
| Project Partners: |
|
| Department: |
Chemistry |
| Organisation: |
De Montfort University |
| Scheme: |
ROPA |
| Starts: |
01 September 2002 |
Ends: |
31 May 2003 |
Value (£): |
26,239
|
| EPSRC Research Topic Classifications: |
| Materials Characterisation |
|
|
| EPSRC Industrial Sector Classifications: |
|
| Related Grants: |
|
| Panel History: |
|
|
Summary on Grant Application Form |
|
There is argument as to the origin of PL in the technologically important semiconductor InN. Indeed few samples oaf InN, even high purity crystals, show PL, whereas the GaN counterpart and the InGaN alloys show intense PL. The aim of the project is to further understand the mechanism of PL in III-Ns through a study of variation of the optical bandgap and PL of InN with nanocrystallite size and crystal structure. Pressure will be used to modify the crystal structure, since InN is known to transform from wurtzite to a NaCl cubic structure at around 15 GPa.
|
|
Key Findings |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
|
Potential use in non-academic contexts |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
|
Impacts |
|
| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
|
| Date Materialised |
|
|
|
|
Sectors submitted by the Researcher |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
| Project URL: |
|
| Further Information: |
|
| Organisation Website: |
http://www.dmu.ac.uk |