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Details of Grant 

EPSRC Reference: GR/R70842/01
Title: New Forms of Device Integration
Principal Investigator: Kelly, Emeritus Professor MJ
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Engineering
Organisation: University of Cambridge
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 2002 Ends: 28 February 2005 Value (£): 152,907
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. VLSI Design
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
In previous work we have found that it is possible to implant through a sensitive device structure (a resonant tunnel diode) which is near the surface, destroying the diode properties in the process, but to recover the near-pristine characteristics upon annealling. We want to extend this concept, first to replicate the results for a near-surface HEMT, and then to demonstrate novel forms of vertical integration of devices to create 'two-and-a-half dimensional circuits. Here we want to show that the integrated structures can work, and we want to establish optimum geometries by modelling. In addition we want to establish some of the parameter boundaries (for the implant and anneal profiles and the device characteristics to which this concept of vertical integration would apply. Our circuit examples would include an inregrated mixer with local oscillator and either a detector/varactor or a HEMT/p-i-n diode combination.
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Organisation Website: http://www.cam.ac.uk