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Details of Grant 

EPSRC Reference: GR/R60171/01
Title: Novel Precursor Chemistry for Ferroelectric Thin-film Memory devices
Principal Investigator: Scott, Professor J
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Earth Sciences
Organisation: University of Cambridge
Scheme: ROPA
Starts: 01 October 2001 Ends: 30 September 2003 Value (£): 156,934
EPSRC Research Topic Classifications:
Materials Characterisation Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Unusual metal-alkoxide precursors will be employed in a mist chemical vapour deposition (liquid-source CVD) system to produce ferroelectric (FE) thin films. The new work will develop deposition techniques for non-planar substrates, including porous silicon photonic crystals. Special emphasis will be on the self-patterning of nanophase cells, discovered by the author in 1997, and on suitable ferroelectric gate and buffer layer combinations for < 0.2 micron gatewidth ferroelectric field effect transitors (FETs).
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Organisation Website: http://www.cam.ac.uk