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Details of Grant 

EPSRC Reference: GR/R45413/01
Title: ION-INDUCED MEMORY SWITCHES IN THE AMORPHOUS SILICON ALLOYS
Principal Investigator: Silva, Professor SRP
Other Investigators:
Shannon, Professor J
Researcher Co-Investigators:
Project Partners:
Philips
Department: Sch of Electronics & Physical Sciences
Organisation: University of Surrey
Scheme: Standard Research (Pre-FEC)
Starts: 13 February 2002 Ends: 31 March 2003 Value (£): 224,331
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. Materials Characterisation
EPSRC Industrial Sector Classifications:
Communications Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Non-volatile switching effects in simple metal-semicondudor-metal (MSM) structures in the amorphous silicon alloys have been known for a long time. They have never been used in a serious application, however, because of the spread in characteristics and irreproducibility of the switching process. We have found that the forming and programmable switching processes are strongly related to the concentration of silicon dangling bonds in the material and are dramatically affected by a small amount of ion bombardment. We have shown, in particular, that ion damage leads to a more uniform and reproducible switching process.It is proposed to use this affect together with our experience and expertise on interface control to make memory switches that operate within a narrow specification compatible with voltages and powers readily available in integrated circuits. Past work has shown, furthermore, that bipolar stressing rather than unipolar gives much higher current transients through the device that should lead to lower switching and forming voltages. The materials chosen are hydrogenated amorphous silicon, silicon-rich amorphous silicon carbides and laser annealed amorphous silicon. All these materials are compatible with large area processing on glass or plastic substrates at law temperatures.
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Organisation Website: http://www.surrey.ac.uk