EPSRC Reference: |
GR/R43334/01 |
Title: |
Novel chemical etching techniques for the processing of InAs and its solid solutions |
Principal Investigator: |
Krier, Professor A |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Physics |
Organisation: |
Lancaster University |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
17 September 2001 |
Ends: |
16 September 2002 |
Value (£): |
74,194
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EPSRC Research Topic Classifications: |
Materials Characterisation |
Materials Processing |
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EPSRC Industrial Sector Classifications: |
Aerospace, Defence and Marine |
Manufacturing |
Electronics |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
We aim to develop chemical etching techniques, based on polycarboxylic acids, for the processing of InAs and its solid solutions (e.g. InAsSb and InAsSbP) for the fabrication of improved mid-infrared LEDs, lasers and detectors. We shall make a systematic investigation of the chemical and crystallographic selectivity of these etchants for the principal materials used in the fabrication of mid infrared LEDs, lasers and photodiodes, and provide information which is absent from the current literature.We shall also investigate passivation of these materials, (a) as substrates prior to epitaxy to improve heterojunction interface quality and (b) at final device processing to improve surface leakage associated with inversion/accumulation layers.We will evaluate the effectiveness of these techniques by their application to mid-infrared devices produced in-house from existing research projects to provide direct information as to likely improvements.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.lancs.ac.uk |