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Details of Grant 

EPSRC Reference: GR/R37494/01
Title: Development of Low Damage Dry Etch Processes for Silicon Carbide Microelectromechanical Systems (MEMS)
Principal Investigator: Harris, Dr AJ
Other Investigators:
Burdess, Professor J
Researcher Co-Investigators:
Project Partners:
Technical University of Delft
Department: Electrical, Electronic & Computer Eng
Organisation: Newcastle University
Scheme: Standard Research (Pre-FEC)
Starts: 04 October 2001 Ends: 03 October 2004 Value (£): 59,212
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. Materials Processing
Microsystems
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
GR/R38019/01
Panel History:  
Summary on Grant Application Form
The proposed research sets out to develop an optimised processing technology to provide a fundamental basis for the future development of high temperature microelectromechanical systems (MEMS) in silicon carbide. The excellent electrical, mechanical and chemical properties of SiC, as well as is high electrical breakdown field offer exciting application possibilities in harsh environments. However, many of the properties that make SiC attractive for MEMS and electronic device applications, also make it a difficult material to process and micromachine. In particular, its chemical inertness provides the ultimate challenge for pattern transfer into the substrate. For example, no reliable wet etchant has been found for SiC. This project proposes to focus on aspects of research important for future MEMS developments in SiC with the main aims being:1) To develop a low damage, fast (hundreds of nm/min.) dry etch process with high selectivity and flexible etch profile control in silicon carbide (SiC) for high temperature microelectromechanical systems (MEMS). Such a process will make possible application areas, such as sensors and actuators, where large etch depths with good profile control are a desired feature.2) To develop fabrication procedures and characterise the electro-mechanical properties of SiC resonant beam devices.
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Organisation Website: http://www.ncl.ac.uk