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Details of Grant 

EPSRC Reference: GR/R36978/01
Title: Research visits to Delft institute of microelectronics and sub-micron technology (DIMES), The Netherlands
Principal Investigator: Cheung, Professor R
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Technical University of Delft
Department: Sch of Engineering
Organisation: University of Edinburgh
Scheme: Overseas Travel Grants Pre-FEC
Starts: 01 June 2001 Ends: 31 May 2003 Value (£): 9,497
EPSRC Research Topic Classifications:
Materials Processing
EPSRC Industrial Sector Classifications:
Electronics Energy
Sports and Recreation
Related Grants:
Panel History:  
Summary on Grant Application Form
The proposed research sets out to strengthen the existing collaboration between the Dept. of EEE at the University of Edinburgh and Technical University of Delft. In addition, it aims to develop an optimised generic processing technology to provide a fundamental basis for the future development of high temperature/power electronics and microelectromechanical systems (MEMS) in silicon carbide. The excellent electrical, mechanical and chemical properties of SIC, as well as its high electrical breakdown field offers exciting application possibilities in harsh environments. However, many of the properties that make SiC attractive for MEMS and electronic device applications, also make it a difficult material to process and micromachine. In particular, its chemical inertness provides the ultimate challenge for pattern transfer into the substrate. For example, no reliable wet etchant has been found for SIC. This project aims to develop a fast (hundreds of nm/min.) dry etch process with high selectivity in silicon carbide (SIC) for high power/temperature electronics and microelectromechanical systems (MEMS).
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