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Details of Grant 

EPSRC Reference: GR/R24425/01
Title: Defect Reactions in SiGe
Principal Investigator: Peaker, Professor AR
Other Investigators:
Hawkins, Dr I Evans-Freeman, Professor J
Researcher Co-Investigators:
Project Partners:
CRMC22-CNRS Imperial College London SiGe Microsystems Inc
University of Arhus University of Warwick
Department: Electrical and Electronic Engineering
Organisation: University of Manchester, The
Scheme: Standard Research (Pre-FEC)
Starts: 29 June 2001 Ends: 28 October 2004 Value (£): 301,606
EPSRC Research Topic Classifications:
Materials Characterisation Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
There is intense interest in making silicon-based ICs which can operate faster, at lower power consumption, by incorporating silicon-germanium alloys. The proposed programme will investigate the properties of intrinsic defects, impurities and other atomic-sized defects in Site. This will contribute to filling a recently identified gap in the UK portfolio of basic science. The study will be in collaboration with other universities and industries currently involved in Site material growth and device design. Unstrained, strained, and relaxed Site will be investigated by high resolution photoluminescence, high resolution Laplace deep level transient spectroscopy and electron paramagnetic resonance, in conjunction with theoretical modelling. Systematic studies will build upon the considerable knowledge of defects in pure Si, tracing their evolution with increasing Ge concentration in the alloy, and especially considering the effect of changes in the host-lattice environment. Defects crested by electron irradiation and ion implantation will be studied, and the evolution from small aggregates to clusters, implicated in transient enhanced diffusion, will be characterised as a function of Ge content and strain. Vacancy, interstitial and impurity reactions with interfaces will also be studied, in relation to trapping and excess charge. The work will be supported by modelling which will provide theoretical investigations of the preferred environments of the neighbourhoods of defects, and of the preferred composition of the self-interstitial structures. The project will be carried out in collaboration with the Site community in the UK, Europe, Canada and USA. The outcome will be an improved understanding of defects arising from different growth techniques and process steps, providing basic knowledge to support commercial applications of this material
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Organisation Website: http://www.man.ac.uk