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Details of Grant 

EPSRC Reference: GR/R23367/01
Title: Atomic Hydrogen Assisted Growth of Iii - V Semiconductor Thin Film Structures
Principal Investigator: Jones, Professor TS
Other Investigators:
McConville, Professor CF
Researcher Co-Investigators:
Project Partners:
Department: Chemistry
Organisation: Imperial College London
Scheme: Standard Research (Pre-FEC)
Starts: 01 July 2001 Ends: 30 June 2004 Value (£): 208,783
EPSRC Research Topic Classifications:
Materials Characterisation Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
This proposal will investigate the role of in-situ atomic H in influencing the homoepitaxial and heteroepitaxial growth of arsenide and phosphide based semiconductor thin film structures grown by molecular beam epitaxy (MBE). Scanning tunnelling microscopy (STM) and reflection high energy electron diffraction (RHEED) will initially be used to study the atomistic mechanisms involved in low temperature substrate preparation (GaAs, InAs, InP) using atomic H. Epitaxial growth in the presence of atomic H will then be studied and we will investigate the mechanisms and atomic scale morphology of hoinoepitaxial growth of GaAs and InAs on different substrate orientations and vicinal surfaces. The role of atomic H in influencing strained layer heteroepitaxial growth (InAs/GaAs, InAs/lnP) will then be studied, concentrating specifically on reducing dislocation formation and density on (110) and (111) A substrates, and controlling self-assembled quantum dot formation and size distribution on (001) substrates. Finally, we will investigate the initial stages of GaAs overgrowth of InAs/GaAs quantum dot structures in the presence of atomic H, focusing in particular on improving surface morphology and the optical properties of the structures.
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Organisation Website: http://www.imperial.ac.uk