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Details of Grant 

EPSRC Reference: GR/R21073/01
Title: Large Signal Model Including Temperature Effects For Gallium Nitride Power Hemt
Principal Investigator: Oxley, Dr CH
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Defence Science and Technology Laborator
Department: School of Engineering & Technology
Organisation: De Montfort University
Scheme: Fast Stream
Starts: 02 August 2001 Ends: 01 August 2004 Value (£): 60,201
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. Materials Characterisation
RF & Microwave Technology
EPSRC Industrial Sector Classifications:
Electronics No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) is of significant interest worldwide because of its potential benefits in terms of output power and bandwidth in comparison to Gallium Arsenide (GaAs) and Indium Phosphide (InP) technologies. The aim of the proposed work is to characterise single cell GaN HEMT devices supplied by the industrial partner-DERA for their dc, ac & rf performance. The experimental data will be used to develop accurate small and large signal equivalent circuit models taking into account the reported large extension of the depletion layer and self heating effects. These models will be validated using rf output power and load-pull measurements. Due to higher power density, the self-heating effects for GaN devices will be higher than for GaAs devices which can detrimentally effect its performance advantages. Novel infra red microscope measurements of the temperature profile at the gate under large signal measurements will be undertaken to derive a simple thermal model, which can be used to determine optimum cell spacing for maximum output power for a given cut-off frequency. This work will enable, for the first time, device scaling issues to theoretically determine maximum output power/frequency limitations for different impedance matching configurations. This work is very timely with material and simple devices becoming available in the UK.
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Organisation Website: http://www.dmu.ac.uk