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Details of Grant 

EPSRC Reference: GR/R17652/01
Title: Mbe Materials For Room Temperature Spintronics
Principal Investigator: Foxon, Professor CT
Other Investigators:
Harrison, Dr I Gallagher, Professor B L Henini, Professor M
Main, Professor P Eaves, Professor L
Researcher Co-Investigators:
Project Partners:
Department: Sch of Physics & Astronomy
Organisation: University of Nottingham
Scheme: Standard Research (Pre-FEC)
Starts: 01 August 2001 Ends: 31 July 2003 Value (£): 218,177
EPSRC Research Topic Classifications:
Materials Characterisation Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
We intend to grow magnetic semiconductors, using molecular beam epitaxy, with the long term aim of fabricating ferromagnetic material with a Curie temperature, Tc, in excess of room temperature. We shall concentrate on two material systems that have been identified in the literature as being the most likely candidates for high Tc. The first is (GaMn)As, which has already been shown to be ferromagnetic at low temperatures. For this material, we intend to employ a range of techniques to raise Tc, including low-temperature growth, the use of As2, delta-doping and growth on high-index planes etc. The second material system is based on (GaMn)N, where a Tc in excess of room temperature has been predicted. For this more speculative investigation, we shall first try to optimise the growth temperature in order to maximise the incorporation of Mn on the Ga sub-lattice. The role of additional p-doping with Mg will also be explored. In each case, all wafers will be thoroughly characterised, using optical, electrical and magnetic characterisation techniques.
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Organisation Website: http://www.nottingham.ac.uk