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Details of Grant 

EPSRC Reference: GR/R12480/01
Title: Improved Precursors For the Mocvd of Strontium Bismuth Tantalate and Related Materials
Principal Investigator: Jones, Professor A.C.
Other Investigators:
Chalker, Professor PR
Researcher Co-Investigators:
Project Partners:
SAFC Hitech
Department: Chemistry
Organisation: University of Liverpool
Scheme: Standard Research (Pre-FEC)
Starts: 01 July 2001 Ends: 30 June 2004 Value (£): 183,506
EPSRC Research Topic Classifications:
Chemical Synthetic Methodology Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The ferroelectric metal oxides SrBi2Ta2O9 (SBT) and SrBi2Nb2O9 (SBN) and SrBi2 (Ta1-xNbx)2O9 (SBTN) have a large potential application in computers in non-volatile ferroelectric random access memories (NVFERAM's). These materials show negligible polarisation fatigue, are fully compatible with conventional simple Pt-electrode technology and maintain good electrical properties even when they are very thin. The aim of the project is to demonstrate the feasibility of growing SrTa2O6, SrNb2O6, Sr(Ta1-xNbx)2O6, SrBi2Nb2O9 and SrBi2 (Ta1-xNbx)2O9 films by liquid injection MOVCD using a range of novel double and triple metal alkoxide sources. In order to convert the as grown SrBi2Nb2O9 thin films to the ferroelectric phase, it is necessary to carry out a post-growth thermal anneal at high temperature ( typically 800() in oxygen converting the low temperature fluorite phase to the required bi-layered structure. It is proposed that an existing in-situ Raman facility at Liverpool will be used to dynamically measure phase changes during annealing. By examining the transition rate as a function of temperature it is anticipated that the activation energy for the phase transition and the evolution of ferroelectric domain structures will be obtainable.
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Organisation Website: http://www.liv.ac.uk