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Details of Grant 

EPSRC Reference: GR/R03815/01
Title: Sigec Hbts On Insulator For Rf Communications
Principal Investigator: Ashburn, Professor P
Other Investigators:
Willoughby, Professor A Bonar, Dr J
Researcher Co-Investigators:
Project Partners:
Department: Electronics and Computer Science
Organisation: University of Southampton
Scheme: Standard Research (Pre-FEC)
Starts: 01 September 2001 Ends: 31 December 2004 Value (£): 298,689
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. Materials Characterisation
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The purpose of this three year grant application is to exploit results generated by the partners in Part I of the project by undertaking new research on the suppression of transient enhanced diffusion through the introduction of the impurities C, F, N and O into SiGe. Scientific research will be undertaken on LPCVD and GSMBE growth of SiGeC and the incorporation of the above impurities by ion beam synthesis. The resulting layers will be characterised using TEM and SIMS and diffusion of dopants in the layers will be modelled. SiGeC HBTs on SOI will be fabricated and the transistors electrically characterised to determine any deleterious effects of the carbon. Device simulations will be performed using profiles generated from the above diffusion models. This will allow the diffusion models to be tested in real transistor structures. Associated research on boron diffusion in tungsten silicide will be done for use in self-aligned extrinsic bases and buried ground planes. The project endpoint will be an rf array on SOI, which will incorporate buried ground planes, thermal vias and SiGeC HBTs.Exploratory research on low voltage digital bipolar circuits will be undertaken for application in the array.
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Further Information:  
Organisation Website: http://www.soton.ac.uk