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Details of Grant 

EPSRC Reference: GR/N65868/01
Title: SIGE FOR MOS TECHNOLOGIES PHASE 2 - DEVELOPMENT AND APPLICATION
Principal Investigator: Thayne, Dr I
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Electronics and Electrical Engineering
Organisation: University of Glasgow
Scheme: Standard Research (Pre-FEC)
Starts: 01 November 2000 Ends: 30 April 2004 Value (£): 330,558
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
To provide theoretical support to the experimental programmes of work to be undertaken within theconsortium, particularly the activities at Warwick on the p-channel devices, but also extending thework to cover n-channel devices. Specific objectives are:(i) To provide a more sophisticated model of alloy scattering that specifically allows for the effects of clustering and segregation in the alloy and also allows for the effects of multiple scattering.(ii) To develop a better theoretical understanding of scattering from interface roughness, both at the Si/SiGe heterointerfaces and also remote effects due to roughness at the Si/oxide interface.(iii) To adapt existing theories of the so-called mobility spectrum technique so as to be applicable to the present structures of interest, enabling accurate determination of the carrier mobility in the SiGe channel of p-MOS devices from the overall measured mobility.
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Organisation Website: http://www.gla.ac.uk