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Details of Grant 

EPSRC Reference: GR/N32969/01
Title: FUTURE TECHNOLOGIES FOR THE ELECTRICAL ISOLATION OF III-V SEMICONDUCTOR DEVICES
Principal Investigator: Sealy, Professor B
Other Investigators:
Gwilliam, Professor R
Researcher Co-Investigators:
Project Partners:
Defence Science and Technology Laborator P R P Optoelectronics Ltd Sensornet
Teledyne e2v (UK) Ltd
Department: Sch of Electronics & Physical Sciences
Organisation: University of Surrey
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 2000 Ends: 30 September 2003 Value (£): 125,423
EPSRC Research Topic Classifications:
Materials Characterisation Materials Processing
EPSRC Industrial Sector Classifications:
Electronics No relevance to Underpinning Sectors
Related Grants:
GR/S52797/01 GR/N32983/02 GR/N32976/01
Panel History:  
Summary on Grant Application Form
A systematic approach to III-V semiconductor electrical isolation via ion implantation is required by the Surrey Ion Beam Centre. We therefore propose a dedicated project investigating the physics and applications of implant isolation. Defect/dopant interaction will be studied through the correlation of point defect concentration and the electrical properties of implanted material. New methods for the efficient isolation of In-based and narrow band-gap materials will be developed on simple test structures. These methods will be applied and tested on real devices for which the need for a planar isolation process has been highlighted, and for which no process currently exists. The results will be summarised in a predictive PC program developed to provide recipes for isolation of devices varying in composition, doping type/concentration and depth.
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Organisation Website: http://www.surrey.ac.uk