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Details of Grant 

EPSRC Reference: GR/N31641/01
Title: A NOVEL MID-INFRARED HETERO-INTERFACE LASER BASED ON TYPE II INAS/INGAASSB
Principal Investigator: Krier, Professor A
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: Lancaster University
Scheme: Standard Research (Pre-FEC)
Starts: 13 July 2000 Ends: 12 July 2001 Value (£): 35,757
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
The work involves the epitaxial growth and characterisation of type-II staggered and broken-gap heterostrucutres based on GainAsSb quatemary solid solutions by LPE on InAs substrates. Epilayers with different compositions will be prepared at various growth temperatures. The lattice mismatch and sharpness of the interface will be carefully monitored since these are important parameters which need to be controlled during the LPE growth in order to obtain laser quality material. The heterointerface properties and layer planarity will be investigated using double-crystal X-ray diffraction, AFM and SEM. The band bending at the type II heterointerface will be established by the study of C-V and I-V characteristics as well as photoconductivity and PL measurements which will also be used to establish the emission wavelength. The key part of the proposed work is to use a single type II broken heterointerface to provide Auger suppression in the active region in a mid-IR laser. Broad are and mesa-stripe laser structures will then be made and characterised. Measurements will include the temperature dependence of the threshold current and current dependence of emission wavelength and power output under steady-state and pulsed mode conditions.
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Organisation Website: http://www.lancs.ac.uk