Details of Grant 

EPSRC Reference:	GR/N28276/01
Title:	STABILITY OF POLY-SILICON THIN FILM TRANSISTORS WITH LOW TEMPERATURE DEPOSITED SILICON DIOXIDE
Principal Investigator:	Robertson, Professor J
Other Investigators:	Milne, Professor WI
Researcher Co-Investigators:
Project Partners:	Philips
Department:	Engineering
Organisation:	University of Cambridge
Scheme:	Standard Research (Pre-FEC)
Starts:	01 December 2000	Ends:	30 November 2003	Value (£):	120,175
EPSRC Research Topic Classifications:	Materials Characterisation Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:	Electronics
Related Grants:
Panel History:
Summary on Grant Application Form
We aim to use an electron cyclotron resonance (ECR) reactor to deposit amorphous Si02 gate oxides for poly-crystalline silicon Thin Film Transistors at low temperatures of order 250C compatible with glass substrates. The key aim will be to minimise the hydrogen incorporation in the Si02 from the process gases to improve its stability to hot carrier degradation and carrier trapping. The second aim is to measure and understand the instability processes of low temperature a-S102 gate oxide in terms of the role of its defects and hydrogen. This will use the extensive knowledge of the instability processes of thermal Si02 and CMOS transistors to better understand the instabilities in deposited a-Si02:H, whose hydrogen content is much greater.
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Organisation Website:	http://www.cam.ac.uk