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Details of Grant 

EPSRC Reference: GR/N25770/01
Title: MULTIPLE TRANSIT REGION GUNN DIODES (MTRGD)
Principal Investigator: Rees, Professor GJ
Other Investigators:
Tozer, Professor R
Researcher Co-Investigators:
Project Partners:
Avery Weigh-Tronix
Department: Electronic and Electrical Engineering
Organisation: University of Sheffield
Scheme: Standard Research (Pre-FEC)
Starts: 03 September 2001 Ends: 02 March 2005 Value (£): 94,897
EPSRC Research Topic Classifications:
Materials Characterisation Materials Processing
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Aerospace, Defence and Marine Communications
Transport Systems and Vehicles
Related Grants:
GR/N24322/01
Panel History:  
Summary on Grant Application Form
We propose a programme investigating the feasibility of multiple transit region Gunn Diodes which will lead to devices several times more powerful than any existing Gunn diode.Existing Gunn diodes comprise only one transit region, which for high (100GHz) frequencies must be less than 1 micron in length for fundamental mode operation. This severely limits the voltage that can be applied and hence the power output. Preliminary investigations of multiple transit region devices, using a sophisticated ensemble Monte Carlo simulation code, indicate that Gunn domains can form and transfer coherently in each transit region, offering the prospect of much longer devices and consequently higher potentials and power outputs.Aberdeen will use Monte Carlo models to simulate and design these devices, fabricated and analysed at Sheffield and EEV, for their DC and radio frequency (RF) performance. In addition, at Sheffield more fundamental studies of the breakdown process as a function of temperature will conducted. These results will be of great importance - not only for the design of the proposed Gunn diodes, but for a wider class of devices operating under high electric fields and temperature.
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Organisation Website: http://www.shef.ac.uk