| EPSRC Reference: |
GR/N18390/01 |
| Title: |
TEM ANALYSIS OF STRAIN AND DEFECTS IN HIGH QUALITY GAN |
| Principal Investigator: |
Cherns, Professor D |
| Other Investigators: |
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| Department: |
Physics |
| Organisation: |
University of Bristol |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 May 2000 |
Ends: |
30 April 2001 |
Value (£): |
9,560
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
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| EPSRC Industrial Sector Classifications: |
| No relevance to Underpinning Sectors |
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Summary on Grant Application Form |
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Funding is requested for a 3-month visit to Bristol by Professor Z Liliental-Weber, who is an expert in GaN research, will bring high quality GaN films grown by the epitaxial overgrowth (ELOG) method and GaN substrate material. Collaborative research will be carried out to develop convergent beam electron diffraction (CBED) methods previously developed in Bristol to quantify strains in GaN epilayers and to characterise new defects observed in ELOG GaN and in GaN substrates.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.bris.ac.uk |