EPSRC logo

Details of Grant 

EPSRC Reference: GR/N09862/01
Title: PRECISION ION IMPLANTED SEMICONDUCTOR DEVICES
Principal Investigator: Kearney, Professor M
Other Investigators:
Gwilliam, Professor R Kelly, Emeritus Professor MJ
Researcher Co-Investigators:
Project Partners:
Teledyne e2v (UK) Ltd
Department: Sch of Electronics & Physical Sciences
Organisation: University of Surrey
Scheme: Standard Research (Pre-FEC)
Starts: 31 October 2000 Ends: 30 October 2003 Value (£): 235,839
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Ion implantation has developed a reputation for precision dosimetry for dopants into III-V semiconductors that exceeds (by a significant margin) the accuracy with which dopants can be incorporated by modern epitaxial techniques. Thie extra precision is the difference that will allow low-cost high-yield devices to be made by ion-implantation rather than epitaxy. This project has four parts: (i) to prove the precision dosimetry for III-V devices, to make (ii) a planer-doped-barrier and a (iii) hyperabrupt varactor by an all-implant process so as to achieve a prespecified I-V characteristic.The work will be undertaken in close cooperation with EEV Ltd, who will offer the exploitation route.
Key Findings
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Potential use in non-academic contexts
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Impacts
Description This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Summary
Date Materialised
Sectors submitted by the Researcher
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Project URL:  
Further Information:  
Organisation Website: http://www.surrey.ac.uk