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Details of Grant 

EPSRC Reference: GR/N08094/01
Title: INGAAS: N MATERIALS FOR UNCOOLED 1.3 UM LASER TRANSMITTERS
Principal Investigator: Adams, Professor M
Other Investigators:
Vickers, Professor A Balkan, Professor N
Researcher Co-Investigators:
Project Partners:
Hewlett Packard Inc
Department: Computing and Electronic Systems1
Organisation: University of Essex
Scheme: Standard Research (Pre-FEC)
Starts: 01 January 2000 Ends: 31 May 2003 Value (£): 177,947
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics Energy
Related Grants:
Panel History:  
Summary on Grant Application Form
Current phosphide based laser diodes for optical fibre communication technologies at 1.3 micron wavelengths generally have poor temperature characteristics and require thermoelectric coolers for reliable operation. An alternative quartenary alloy semiconductor system has recently been proposed based on InGaAs:N/GaAs which has the potential benefits of: reduced temperature sensitivity obviating the need for thermoelectroc coolers; better electron confinement; and small wave length shifts with temperature changes.The focus of this proposal is to develop an uncooled laser diode with high thermal stability and improved optical confinement based on the InGaAs:N/GaAs system using Chemical Beam Epitaxy. To achieve these objectives novel improvements are proposed in terms of active well composition, epitaxy and thickness; well cladding and optical confinement.The programme is multidisciplinary, bringing together expertise in materials science and device physics from the Universities of Liverpool and Essex. The project will involve significant input from Hewlett-Packard Ltd, which is a world-class manufacturer.
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Organisation Website: http://www.sx.ac.uk