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Details of Grant 

EPSRC Reference: GR/N07868/01
Title: GALLIUM NITRIDE VCSELS WITH BURIED DIELECTRIC BRAGG MIRRORS
Principal Investigator: Martin, Professor RW
Other Investigators:
ODonnell, Professor K Dawson, Professor M Watson, Dr I
Researcher Co-Investigators:
Project Partners:
P R P Optoelectronics Ltd Samsung Terahertz Photonics Ltd
University of North Carolina (replace)
Department: Physics
Organisation: University of Strathclyde
Scheme: Standard Research (Pre-FEC)
Starts: 19 June 2000 Ends: 18 June 2003 Value (£): 258,825
EPSRC Research Topic Classifications:
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
A collaborative programme is proposed to explore a novel and realistic approach to the production of Gallium Nitride based Vertical-Cavity Surface-Emitting lasers (GaN-VCSELs). The concept involves epitaxial layer overgrowth above a patterned dielectric Bragg mirror. This will produce low-loss, high-reflectance bottom mirror elements for the VCSEL devices and define the mode area, but equally important, will allow overgrowth of a high-quality GaN/GaInN/AlGaN active region and microcavity, free from threading dislocations. To allow this approach to be fully explored this proposal brings together partners with expertise in III-Nitride physics, epitaxial growth, semiconductor device design, VCSEL technology and device processing. It is further enhanced by significant commitments of support from world-leading industrial and academic external collaborators.
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Organisation Website: http://www.strath.ac.uk